參數(shù)資料
型號(hào)： AH215-S8G
元件分類： 放大器
英文描述： 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： GREEN, MS-012, SMT, SOIC-8
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 336K
代理商： AH215-S8G
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 7 March 2008
AH215
1 Watt, High Linearity InGaP HBT Amplifier
Product Features
400 – 2300 MHz
18 dB Gain @ 900 MHz
+31.5 dBm P1dB
+46 dBm Output IP3
+5V Single Positive Supply
Lead-free/green/RoHS-compliant
SOIC-8 SMT Package
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able
to
achieve
superior
performance
for
various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required.
The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameters
Units Min
Typ
Max
Operational Bandwidth
MHz
400
2300
Test Frequency
MHz
2140
Gain
dB
10
11
Input Return Loss
dB
18
Output Return Loss
dB
8
Output P1dB
dBm
+29
+31.5
Output IP3
(2)
dBm
+43.8
+45
Noise Figure
dB
6.3
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
dBm
+25.5
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
dBm
+23
Operating Current Range , Icc
(3)
mA
400
450
500
Device Voltage, Vcc
V
5
1. Test conditions unless otherwise noted: 25 C, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150 °C
RF Input Power (continuous)
+26 dBm
Device Voltage
+8 V
Device Current
900 mA
Device Power
5 W
Thermal Resistance
33 °C / W
Junction Temperature
+200°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameters
Units
Typical
Frequency
MHz
900
1960
2140
Gain
dB
18
12
11
S11
dB
-13
-11
-18
S22
dB
-7
-10
-8
Output P1dB
dBm
+31
+32
+31.5
Output IP3
dBm
+46
+45
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+25.5
wCDMA Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7.0
5.5
6.2
Supply Bias
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No.
Description
AH215-S8G
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH215-S8PCB900
900 MHz Evaluation Board
AH215-S8PCB1960
1960 MHz Evaluation Board
AH215-S8PCB2140
2140 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
1
2
3
4
8
7
6
5
相關(guān)PDF資料
PDF描述
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH215 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH22 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH266-PL-A MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AH215-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH215-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB2140 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 11dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB900 功能描述:射頻開發(fā)工具 900MHz Eval Brd 18dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*