參數(shù)資料
型號： AH215-S8G
元件分類： 放大器
英文描述： 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： GREEN, MS-012, SMT, SOIC-8
文件頁數(shù)： 4/7頁
文件大小： 336K
代理商： AH215-S8G
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 4 of 7 March 2008
AH215
1 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (AH215-S8PCB1960)
Typical RF Performance at 25 °°°°C
Frequency
1960 MHz
S21 – Gain
12 dB
S11 – Input Return Loss
-11 dB
S22 – Output Return Loss
-10 dB
Output P1dB
+32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing)
+46 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+25.5 dBm
Noise Figure
5.5 dB
Device / Supply Voltage
+5 V
Quiescent Current
(1)
450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
8
10
12
14
16
18
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
2
1
(d
B
)
+25°C
+85°C
-40°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
1
(d
B
)
+25°C
+85°C
-40°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
2
(d
B
)
+25 °C
+85 °C
-40°C
Noise Figure vs. Frequency
0
1
2
3
4
5
6
7
8
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
N
F
(d
B
)
+25°C
+85°C
-40°C
P1 dB vs. Frequency
25
27
29
31
33
35
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
P
1
d
B
(d
B
m
)
+25°C
+85°C
-40°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
15 16 17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
A
C
P
R
(d
B
c
)
+25°C
+85°C
-40°C
OIP3 vs. Frequency
+25°C, 15 dBm / tone
35
40
45
50
55
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
O
IP
3
(d
B
m
)
OIP3 vs. Temperature
freq. = 1960, 1961 MHz, +15 dBm
35
39
43
47
51
55
-40
-15
10
35
60
85
Temperature ( °C)
O
IP
3
(d
B
m
)
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25°C
30
34
38
42
46
50
10
12
14
16
18
20
22
Output Power (dBm)
O
IP
3
(d
B
m
)
相關(guān)PDF資料
PDF描述
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH215-S8 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH215 400 MHz - 2300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH22 50 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH266-PL-A MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 1.10-1.50V, RECTANGULAR, THROUGH HOLE MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AH215-S8-G 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
AH215-S8PCB1960 功能描述:射頻開發(fā)工具 1960MHz Eval Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB2140 功能描述:射頻開發(fā)工具 2140MHz Eval Brd 11dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8PCB900 功能描述:射頻開發(fā)工具 900MHz Eval Brd 18dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AH215-S8TRG 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
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