參數(shù)資料
型號(hào)： ALD1103
廠商： Advanced Linear Devices, Inc.
英文描述： JT 21C 21#16 SKT GRND PLUG
中文描述： 雙N溝道和雙P溝道MOSFET的一對(duì)匹配
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 68K
代理商： ALD1103
ALD1103
Advanced Linear Devices
2
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
13.2V
Gate-source voltage, VGS
13.2V
Power dissipation
500 mW
Operating temperature range
PB, SB package
0
°C to +70°C
DB package
-55
°C to +125°C
Storage temperature range
-65
°C to +150°C
Lead temperature, 10 seconds
+260
°C
Gate Threshold
VT
0.4
0.7
1.0
V
IDS = 10A VGS = VDS
-0.4
-0.7
-1.2
V
IDS = -10A VGS = VDS
Voltage
Offset Voltage
VOS
10
mV
IDS = 100A VGS = VDS
10
mV
IDS = -100A VGS = VDS
VGS1 - VGS2
Gate Threshold
Temperature
TCVT
-1.2
mV/
°C
-1.3
mV/
°C
Drift
On Drain
IDS (ON)
25
40
mA
VGS = VDS = 5V
-8
-16
mA
VGS = VDS = -5V
Current
Trans-.
Gfs
5
10
mmho
VDS = 5V IDS= 10mA
2
4
mmho
VDS = -5V IDS= -10mA
conductance
Mismatch
Gfs
0.5
%
0.5
%
Output
GOS
200
mho
VDS = 5V IDS = 10mA
500
mho
VDS = -5V IDS = -10mA
Conductance
Drain Source
RDS(ON)
50
75
VDS = 0.1V VGS = 5V
180
270
VDS = -0.1V VGS = -5V
ON Resistance
Drain Source
ON Resistance
RDS(ON)
0.5
%
VDS = 0.1V VGS = 5V
0.5
%
VDS = -0.1V VGS = -5V
Mismatch
Drain Source
Breakdown
BVDSS
12
V
IDS = 10A VGS =0V
-12
V
IDS = -10A VGS =0V
Voltage
Off Drain
IDS(OFF)
0.1
4
nA
VDS =12V IGS = 0V
0.1
4
nA
VDS = -12V VGS = 0V
Current
4
ATA = 125°C4
ATA = 125°C
Gate Leakage
IGSS
150
pA
VDS = 0V VGS =12V
1
50
pA
VDS = 0V VGS =-12V
Current
10
nA
TA = 125°C10
nA
TA = 125°C
Input
CISS
610
pF
6
10
pF
Capacitance
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25
°C unless otherwise specified
N - Channel
Test
P - Channel
Test
Parameter
Symbol Min
Typ
Max
Unit
Conditions
Min
Typ
Max
Unit
Conditions
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ALD1103_12 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103DB 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103PB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ALD1103PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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