參數(shù)資料
型號(hào): ALD1103
廠商: Advanced Linear Devices, Inc.
英文描述: JT 21C 21#16 SKT GRND PLUG
中文描述: 雙N溝道和雙P溝道MOSFET的一對(duì)匹配
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 68K
代理商: ALD1103
ALD1103
Advanced Linear Devices
3
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN - SOURCE VOLTAGE (V)
DRAIN
-
SOURCE
CURRENT
(mA)
-80
-60
-40
-20
0
VBS = 0V
TA = 25°C
-10V
-8V
-6V
-4V
-2V
0-8
-2
-6
-4
-10
-12
VGS = -12V
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN -SOURCE VOLTAGE (mV)
DRAIN-SOURCE
CURRENT
(mA)
-320
-160
0
160
320
-4
4
2
0
-2
-4V
VGS = -12V
-6V
VBS = 0V
TA = 25°C
-2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN - SOURCE VOLTAGE
DRAIN - SOURCE VOLTAGE (V)
0-8
-2
-6
-4
-10
FORWARD
TRANSCONDUCTANCE
(
mho)
10000
5000
2000
1000
500
200
100
VBS = 0V
f = 1KHz
IDS = -5mA
TA = +125°C
TA = +25°C
IDS = -1mA
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE - SOURCE VOLTAGE (V)
0
-0.8
-1.6
-2.4
-3.2
-4.0
-20
-15
-10
-5
0
DRAIN-SOURCE
CURRENT
(
A)
VBS = 0V
4V
6V
8V
10V
12V
VGS = VDS
TA = 25°C
2V
GATE - SOURCE VOLTAGE (V)
RDS (ON) vs. GATE - SOURCE VOLTAGE
DRAIN
-
SOURCE
ON
RESISTANCE
(
)
10000
1000
100
10
-2
0
-4
-6
-8
-10
-12
VDS = 0.4V
VBS = 0V
TA = +125°C
TA = +25°C
OFF DRAIN - CURRENT vs.
TEMPERATURE
TEMPERATURE (
°C)
OFF
-
DRAIN
SOURCE
CURRENT
(A)
-50
-25
+25
+50
+75
+125
+100
0
-10X10-6
VDS = -12V
VGS = VBS = 0V
-10X10-12
-10X10-9
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ALD1103DB 制造商:ALD 制造商全稱:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
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ALD1103PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube