參數資料
型號： AM28F010A-200ECB
廠商： Advanced Micro Devices, Inc.
英文描述： 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述： 1兆位（128畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法
文件頁數： 19/35頁
文件大?。?/td> 464K
代理商： AM28F010A-200ECB
Am28F010A
19
ABSOLUTE MAXIMUM RATINGS
Storage Temperature . . . . . . . . . . . .
–65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
All pins except A9 and V
PP
(Note 1) .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9, V
PP
(Note 2) . . . . . . . . . . . . . . .–2.0 V to +14.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1.
Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. Maximum DC voltage on
input or I/O pins is V
CC
+0.5 V During voltage transitions,
input or I/O pins may overshoot to V
CC
+2.0 V for periods
up to 20 ns.
2. Minimum DC input voltage on pins A9 and V
PP
is –0.5 V
During voltage transitions, A9 and V
PP
may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC
input voltage on pin A9 and V
PP
is +13.0 V, which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device
reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .
0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .–40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . .–55°C to +125°C
V
CC
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
V
PP
Voltages
Read . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.6 V
Program, Erase, and Verify. . . . . . +11.4 V to +12.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
相關PDF資料
PDF描述
AM28F010A-70EE 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-70EEB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-70EI 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-70FC 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-70FE 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相關代理商/技術參數
參數描述
AM28F010A-200EE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200EEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200EI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200EIB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-200FC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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