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參數(shù)資料
| 型號(hào)： | AM28F010A-200ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 12.0伏，整體擦除閃存的嵌入式記憶算法 |
| 文件頁(yè)數(shù)： | 24/35頁(yè) |
| 文件大?。?/td> | 464K |
| 代理商： | AM28F010A-200ECB |
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24
Am28F010A
SWITCHING TEST WAVEFORMS
SWITCHING CHARACTERISTICS over operating range, unless otherwise specified
AC Characteristics—Read-Only Operations
Notes:
1. Guaranteed by design; not tested.
2. Not 100% tested.
Parameter
Symbols
Am28F010A Speed Options
JEDEC
Standard
Parameter Description
-70
-90
-120
-150
-200
Unit
t
AVAV
t
RC
Read Cycle Time (Note 3)
Min
70
90
120
150
200
ns
t
ELQV
t
CE
Chip Enable Access Time
Max
70
90
120
150
200
ns
t
AVQV
t
ACC
Address Access Time
Max
70
90
120
150
200
ns
t
GLQV
t
OE
Output Enable Access Time
Max
35
35
50
55
55
ns
t
ELQX
t
LZ
Chip Enable to Output in Low Z (Note 3)
Min
0
0
0
0
0
ns
t
EHQZ
t
DF
Chip Disable to Output in High Z (Note 1)
Max
20
20
30
35
35
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z (Note 3)
Min
0
0
0
0
0
ns
t
GHQZ
t
DF
Output Disable to Output in High Z (Note 3)
Max
20
20
30
35
35
ns
t
AXQX
t
OH
Output Hold Time From First Address, CE
#
,
or OE
#
change (Note 3)
Min
0
0
0
0
0
ns
t
VCS
V
CC
Set-up Time to Valid Read (Note 3)
Min
50
50
50
50
50
ns
16778D-17
3 V
0 V
Input
Output
1.5 V
1.5 V
Test Points
AC Testing for -70 devices: Inputs are driven at 3.0 V for a
logic “1” and 0 V for a logic “0”. Input pulse rise and fall times
are
≤
10 ns.
2.4 V
0.45 V
Input
Output
Test Points
2.0 V
2.0 V
0.8 V
0.8 V
AC Testing (all speed options except -70): Inputs are driven at
2.4 V for a logic “1” and 0.45 V for a logic “0”. Input pulse rise
and fall times are
≤
10 ns.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM28F010A-70EE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70EEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70EI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-70FE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM28F010A-200EE | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EEB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200EIB | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-200FC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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