參數(shù)資料
型號(hào)： AM28F020-120PIB
廠商： Advanced Micro Devices, Inc.
英文描述： 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述： 2兆位（256畝× 8位）的CMOS 12.0伏，整體擦除閃存
文件頁(yè)數(shù)： 17/35頁(yè)
文件大?。?/td> 509K
代理商： AM28F020-120PIB
Am28F020
17
Table 5.
Flashrite Programming Algorithm
Notes:
1. See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
is written with the read command.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(Note 1)
Initialize Pulse counter
Write
Program Setup
Data = 40h
Program
Valid Address/Data
Standby
Duration of Programming Operation (t
WHWH1
)
Write
Program-Verify (Note 2)
Data = C0h Stops Program Operation
Standby
Write Recovery Time before Read = 6 μs
Read
Read Byte to Verify Programming
Standby
Compare Data Output to Data Expected
Write
Reset
Data = FFh, resets the register for read operations.
Standby
Wait for V
PP
Ramp to V
PPL
(Note 1)
相關(guān)PDF資料
PDF描述
AM28F020-150EC 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-150ECB 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-150EE 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-150EEB 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F020-150EI 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F020-150/BXA 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
AM28F020-150C3/BXA 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
AM28F020-150C3DC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
AM28F020-150C3DCB 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
AM28F020-150C3DE 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 Flash EEPROM
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