參數(shù)資料
型號(hào)： AM28F256-70FIB
廠商： Advanced Micro Devices, Inc.
英文描述： 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述： 256千比特（32畝× 8位）的CMOS 12.0伏，整體擦除閃存
文件頁(yè)數(shù)： 14/35頁(yè)
文件大小： 493K
代理商： AM28F256-70FIB
14
Am28F256
Figure 2.
AC Waveforms For Erase Operations
ANALYSIS OF ERASE TIMING WAVEFORM
Note:
This analysis does not include the requirement
to program the entire array to 00h data prior to erasure.
Refer to the Flashrite
Programming algorithm.
Erase Setup/Erase
This analysis illustrates the use of two-cycle erase
commands (section A and B). The first erase com-
mand (20h) is a Setup command and does not affect
the array data (section A). The second erase com-
mand (20h) initiates the erase operation (section B)
on the rising edge of this WE# pulse. All bytes of the
memory array are erased in parallel. No address infor-
mation is required.
The erase pulse occurs in section C.
Time-Out
A software timing routine (10 ms duration) must be ini-
tiated on the rising edge of the WE# pulse of section B.
Note:
An integrated stop timer prevents any possibil-
ity of overerasure by limiting each time-out period of
10 ms.
Erase-Verify
Upon completion of the erase software timing routine,
the microprocessor must write the Erase-verify com-
mand (A0h). This command terminates the erase oper-
ation on the rising edge of the WE# pulse (section D).
The Erase-verify command also stages the device for
data verification (section F).
After each erase operation each byte must be verified.
The byte address to be verified must be supplied with
Addresses
CE
#
OE
#
WE
#
Data
V
PP
V
CC
11559G-7
20h
20h
Section
A0h
Data
Out
Bus Cycle
Write
Write
Time-out
Write
Time-out
Read
Standby
Command
20h
20h
N/A
A0h
N/A
Compare
Data
N/A
Function
Erase
Setup
Erase
Erase
(10 ms)
Erase-
Verify
Transition
(6 μs)
Erase
Verification
Proceed per
Erase
Algorithm
A
B
D
E
F
C
G
A
B
D
E
F
C
G
相關(guān)PDF資料
PDF描述
AM28F256-70JC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90FIB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90JC 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90JCB 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-90JE 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM28F256-70JC 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JCB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JE 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JEB 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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