參數(shù)資料
型號: AM28F256-70FIB
廠商: Advanced Micro Devices, Inc.
英文描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
中文描述: 256千比特(32畝× 8位)的CMOS 12.0伏,整體擦除閃存
文件頁數(shù): 17/35頁
文件大小: 493K
代理商: AM28F256-70FIB
Am28F256
17
Table 5.
Flashrite Programming Algorithm
Notes:
1. See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V
2. Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register
is written with the read command.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(Note 1)
Initialize Pulse counter
Write
Program Setup
Data = 40h
Program
Valid Address/Data
Standby
Duration of Programming Operation (t
WHWH1
)
Write
Program-Verify (Note 2)
Data = C0h Stops Program Operation
Standby
Write Recovery Time before Read = 6 μs
Read
Read Byte to Verify Programming
Standby
Compare Data Output to Data Expected
Write
Reset
Data = FFh, resets the register for read operations.
Standby
Wait for V
PP
Ramp to V
PPL
(Note 1)
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相關(guān)代理商/技術(shù)參數(shù)
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AM28F256-70JC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JCB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JE 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JEB 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F256-70JI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory