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參數(shù)資料
| 型號： | AM29BDD160GB17AKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 16兆位（1 M中的x 16-bit/512畝× 32位），2.5伏的CMOS只突發(fā)模式，雙啟動，同步讀/寫閃存 |
| 文件頁數(shù)： | 3/79頁 |
| 文件大小： | 1368K |
| 代理商： | AM29BDD160GB17AKI |
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DATA SHEET
Publication#
24960
Issue Date:
June 7, 2006
Rev:
D
Amendment:
5
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29BDD160G
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode,
Dual Boot, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank.
(–40°C to 85°C, 56 MHz and below only)
— Zero latency between read and write operations
— Two bank architecture: 75%/25%
User-Defined x16 or x32 Data Bus
Dual Boot Block
— Top and bottom boot in the same device
Flexible sector architecture
— Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
sectors
Manufactured on 0.17 μm process technology
SecSi (Secured Silicon) Sector (256 Bytes)
— Current version of device has 64 Kbytes; future
versions will have 256 bytes
—
Factory locked and identifiable:
16 bytes for secure,
random factory Electronic Serial Number; remainder
may be customer data programmed by AMD
—
Customer lockable:
Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
Programmable Burst interface
— Interface to any high performance processor
— Modes of Burst Read Operation:
Linear Burst: 4 double words (x32), 8 words (x16)
and double words (x32), and 32 words (x16) with
wrap around
Single power supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatible with JEDEC standards (JC42.4)
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance read access
— Initial/random access time as fast as 54 ns
— Burst access time as fast as 9 ns for ball grid array
package
Ultra low power consumption
— Burst Mode Read: 90 mA @ 66 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 μA max
Minimum 1 million write cycles guaranteed per
sector
20 year data retention at 125°C
VersatileI/O
TM
control
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
— 1.65 V to 2.75 V compatible I/O signals
SOFTWARE FEATURES
Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector (requires only V
CC
levels)
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
HARDWARE FEATURES
Program Suspend/Resume & Erase
Suspend/Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/BY#),
and Write Protect (WP#) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
— 80-pin PQFP
— 80-ball Fortified BGA
NOTE: For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifica-
tions and ordering information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB17AKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17APBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17APBF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17APBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB17APBK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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