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參數(shù)資料

型號(hào)：	AM29BDD160GB54DKE
廠商：	ADVANCED MICRO DEVICES INC
元件分類：	PROM
英文描述：	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述：	512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
封裝：	PLASTIC, QFP-80
文件頁(yè)數(shù)：	56/80頁(yè)
文件大小：	3476K
代理商：	AM29BDD160GB54DKE

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4

Am29BDD160G

Configuration Register Write Command ........................36

Common Flash Interface (CFI) Command ......................36

SecSi Sector Entry Command ...............................................38

Password Program Command .............................................38

Password Verify Command ..................................................38

Password Protection Mode Locking Bit Program

Command ..................................................................................38

Persistent Sector Protection Mode Locking Bit

Program Command ................................................................39

SecSi Sector Protection Bit Program Command ...........39

PPB Lock Bit Set Command .................................................39

DYB Write Command ...........................................................39

Password Unlock Command ...............................................39

PPB Program Command ....................................................... 40

DYB Write ............................................................................... 40

PPB Lock Bit Set ..................................................................... 40

DYB Status ................................................................................ 40

PPB Lock Bit Status ................................................................ 40

Non-volatile Protection Bit Program And Erase

Flow ............................................................................................ 40

Table 19. Memory Array Command

Definitions (x32 Mode) ................................................................... 42

Table 20. Sector Protection Command

Definitions (x32 Mode) ................................................................... 43

Table 21. Memory Array Command

Definitions (x16 Mode) .................................................................... 45

Table 22. Sector Protection Command

Definitions (x16 Mode) .................................................................... 47

Write Operation Status . . . . . . . . . . . . . . . . . . . . 49

DQ7: Data# Polling ................................................................ 49

RY/BY#: Ready/Busy# ........................................................... 49

Figure 6. Data# Polling Algorithm .............................................. 50

DQ6: Toggle Bit I ................................................................... 50

DQ2: Toggle Bit II .................................................................. 50

Reading Toggle Bits DQ6/DQ2 ............................................51

DQ5: Exceeded Timing Limits ..............................................51

Figure 7. Toggle Bit Algorithm ...................................................... 51

Table 23. Write Operation Status ............................................... 52

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 53

Figure 8. Maximum Negative Overshoot Waveform ............ 53

Figure 9. Maximum Positive Overshoot Waveform............... 53

OPERATING RANGES ...........................................................53

DC CHARACTERISTICS . . . . . . . . . . . . . . . . . . . 54

Table 24. CMOS Compatible ........................................................ 54

DC CHARACTERISTICS (Continued) . . . . . . . . 55

Zero Power Flash ....................................................................55

Figure 10. ICC1 Current vs. Time

(Showing Active and Automatic Sleep Currents) .................. 55

Figure 11. Typical Icc1 vs. Frequency............................................. 55

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Figure 12. Test Setup ....................................................................... 56

Table 25. Test Specifications ......................................................... 56

KEY TO SWITCHING WAVEFORMS .............................56

SWITCHING WAVEFORMS ...............................................56

Figure 13. Input Waveforms and Measurement

Levels .................................................................................................... 56

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 57

VCC and VIO Power Up ........................................................57

Figure 14. VCC and VIO Power-up Diagram............................ 57

Asynchronous Read Operations ........................................ 58

Burst Mode Read .....................................................................59

Figure 15. Conventional Read Operations Timings................. 60

Figure 16. Burst Mode Read (x32 Mode).................................... 60

Figure 17. Asynchronous Command Write Timing.................. 61

Figure 18. Synchronous Command Write/Read Timing ......... 61

Hardware Reset (RESET#) ................................................... 62

Figure 19. Reset Timing.................................................................... 63

Figure 20. WP# Timing ................................................................... 63

Erase/Program Operations .................... 64

Figure 21. Program Operation Timings ..................................... 65

Figure 22. Chip/Sector Erase Operation Timings ................... 65

Figure 23. Back-to-Back Cycle Timing ........................................ 66

Figure 24. Data# Polling Timings (During Embedded

Algorithms) ........................................................................................ 66

Figure 25. Toggle Bit Timings (During Embedded

Algorithms) ......................................................................................... 67

Figure 26. DQ2 vs. DQ6 for Erase and Erase Suspend

Operations .......................................................................................... 67

Figure 27. Synchronous Data Polling Timing/Toggle

Bit Timing............................................................................................. 68

Figure 28. Sector Protect/Unprotect Timing Diagram.......... 68

Alternate CE# Controlled Erase/Program

Operations ................................................................................. 69

Figure 29. Alternate CE# Controlled Write Operation

Timings ................................................................................................. 70

Erase and Programming Performance . . . . . . . . . 71

LATCHUP CHARACTERISTICS .........................................71

PQFP AND FORTIFIED BGA PIN CAPACITANCE ....71

DATA RETENTION ................................................................71

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 72

PQR080-80-Lead Plastic Quad Flat Package ....................72

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 73

LAA 080-80-ball Fortified Ball Grid

Array (13 x 11 mm) .....................................................................73

Revision Summary. . . . . . . . . . . . . . . . . . . . . . . . . 74

相關(guān)PDF資料	PDF描述
AM29BDD160GB54DKF	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKI	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKK	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBE	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBI	16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory

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