參數資料
型號: AM29BDD160GB54DKE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
封裝: PLASTIC, QFP-80
文件頁數: 71/80頁
文件大?。?/td> 3476K
代理商: AM29BDD160GB54DKE
Am29BDD160G
71
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Note:
1. Not 100% tested.
2. See the section for more information.
Parameter
Description
All Speed Options
Unit
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
65
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
tEHDX
tDH
Data Hold Time
Min
2
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
Read Recovery Time Before Write (OE#
High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tWADVS
WE# Rising Edge Setup to ADV# Falling
Edge
Min
5
ns
tWP
WE# Width
Min
15
ns
tWADVH
WE# Falling Edge After ADV# Falling Edge
Min
0
ns
tWCKS
WE# Rising Edge Setup to CLK Rising Edge
Min
5
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWsH1
tWHWH1 Programming Operation (Note 2)
Typ
9
s
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec.
相關PDF資料
PDF描述
AM29BDD160GB54DKF 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DKK 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GB54DPBI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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