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參數(shù)資料
| 型號(hào)： | AM29BDD160GB64CKE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 |
| 封裝： | PLASTIC, QFP-80 |
| 文件頁(yè)數(shù)： | 57/80頁(yè) |
| 文件大?。?/td> | 3476K |
| 代理商： | AM29BDD160GB64CKE |
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58
Am29BDD160G
TEST CONDITIONS
Note: Diodes are IN3064 or equivalent
Figure 12. Test Setup
KEY TO SWITCHING WAVEFORMS
KS000010-PAL
SWITCHING WAVEFORMS
Figure 13. Input Waveforms and Measurement Levels
Table 25. Test Specifications
Test Condition
54D, 64C
65A
Unit
Output Load
1 TTL gate
Output Load Capacitance,
CL (including jig
capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0 V – VIO
V
Input timing measurement
reference levels
VIO/2
V
Output timing measurement
reference levels
VIO/2
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
VIO
VSS
相關(guān)PDF資料 |
PDF描述 |
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| AM29BDD160GB64CKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB64CKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB64CKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB65APBE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GB65APBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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