參數(shù)資料
型號(hào): AM29BDD160GB65APBE
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, BGA-80
文件頁數(shù): 40/80頁
文件大?。?/td> 3476K
代理商: AM29BDD160GB65APBE
Am29BDD160G
43
selector nor the program/erase margin enable. In-
stead, this function is accomplished by issuing the
specific command for either program (68h) or erase
(60h).
In asynchronous mode, the DQ6 toggle bit indicates
whether the program or erase sequence is active. (In
synchronous mode, ADV# indicates the status.) If
the DQ6 toggle bit toggles with either OE# or CE#,
the non-volatile bit program or erase operation is in
progress. When DQ6 stops toggling, the value of the
non-volatile bit is available on DQ0.
相關(guān)PDF資料
PDF描述
AM29BDD160GB65APBI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKE 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKF 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKI 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
AM29BDD160GT54DKK 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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