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參數(shù)資料
| 型號(hào)： | AM29BDD160GB65APBE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, BGA-80 |
| 文件頁數(shù)： | 60/80頁 |
| 文件大?。?/td> | 3476K |
| 代理商： | AM29BDD160GB65APBE |
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Am29BDD160G
61
AC CHARACTERISTICS
Burst Mode Read
Note: See Product Selector Guide for minimum initial clock delay prior to initial valid data. t
IACC may also be calculated using the following
formula: t
IACC = (clock delays) x (clock period) + tBACC.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
54D
64C
65A
tIACC
Asynchronous Access Time ADV# Valid
Clock to Output Delay (See Note)
Max
54
64
67
ns
tBACC
Burst Access Time Valid Clock to Output
Delay
Max
9 FBGA
9.5 PQFP
10 FBGA
10 PQFP
17
ns
tADVCS
ADV# Setup Time to Rising (Falling)
Edge of CLK
Min
4
5
7
ns
tADVCH ADV# Hold Time
Min
2
ns
tADVP
ADV# Pulse Width
Min
15
18
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tDVCH Valid Data Hold from CLK
Min
2
3
ns
tDIND
CLK to Valid IND/WAIT#
Max
9 FBGA
9.5 PQFP
10 FBGA
10 PQFP
17
ns
tINDH
IND/WAIT# Hold from CLK
Min
2
3
ns
tIACC
CLK to Valid Data Out, Initial Burst
Access
Max
54
60
68
ns
tCLK
CLK Period
Min
15
18
25
ns
Max
60
tCR
CLK Rise Time
Max
3
ns
tCF
CLK Fall Time
Max
3
ns
tCH
CLK High Time
Min
2.5
3
ns
tCL
CLK Low Time
Min
2.5
3
ns
tDS
Data Setup to WE# Rising Edge
Min
15
16
ns
tDH
Data Hold from WE# Rising Edge
Min
2
ns
tAS
Address Setup to Falling Edge of WE#
Min
0
ns
tAH
Address Hold from Falling Edge of WE#
Min
25
30
33
ns
tCS
CE# Setup Time
Min
3
ns
tCH
CE# Hold Time
Min
3
ns
tACS
Address Setup Time to CLK (See Note)
Min
5
6
7
ns
tACH
Address Hold Time from ADV# Rising
Edge (See Note)
Min
1
2
ns
tOE
Output Enable to Output Valid
Max
20
ns
tDF
tOEZ
Output Enable to Output High Z
Min
2
3
ns
Max
10
15
17
tEHQZ
tCEZ
Chip Enable to Output High Z
Max
10
15
17
ns
tCES
CE# Setup Time to Clock
Min
4
5
6
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BDD160GB65APBI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKE | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKF | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKI | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| AM29BDD160GT54DKK | 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
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