- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376484 > AM29BL802CB-65R (Spansion Inc.) 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29BL802CB-65R |
| 廠商： | Spansion Inc. |
| 英文描述： | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory |
| 中文描述： | 8兆位（512畝× 16位）的CMOS 3.0伏特，只有突發(fā)模式閃存 |
| 文件頁數(shù)： | 3/46頁 |
| 文件大?。?/td> | 466K |
| 代理商： | AM29BL802CB-65R |
第1頁第2頁當(dāng)前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁
DATA SHEET
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22371
Issue Date:
November 3, 2006
Rev:
C
Amendment:
7
Am29BL802C
8 Megabit (512 K x 16-Bit)
CMOS 3.0 Volt-only Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
■
32 words sequential with wrap around (linear
32), bottom boot
■
One 8 Kword, two 4 Kword, one 48 Kword, three
64 Kword, and two 128 Kword sectors
■
Single power supply operation
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■
Read access times
Burst access times as fast as 17 ns at industrial
temperature range (18 ns at extended
temperature range)
Initial/random access times as fast as 65 ns
■
Alterable burst length via BAA# pin
■
Power dissipation (typical)
— Burst Mode Read: 15 mA @ 25 MHz,
20 mA @ 33 MHz, 25 mA @ 40 MHz
— Program/Erase: 20 mA
— Standby mode, CMOS: 3 μA
■
5 V-tolerant data, address, and control signals
■
Sector Protection
— Implemented using in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 100,000 erase cycle guarantee
per sector
■
20-year data retention
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
— Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
asynchronous mode for system boot, but can
immediately be placed into burst mode
■
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
■
Package Option
— 56-pin SSOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29BL802CB-70R | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory |
| AM29BL802CB-90R | 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory |
| AM29LV652DU12RMAI | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| AM29LV652DU12RMAK | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
| AM29LV652D | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29BL802CB-65RZET | 制造商:Spansion 功能描述: |
| AM29C01WW WAF | 制造商:Advanced Micro Devices 功能描述: |
| AM29C10API | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| AM29C10AWW DIE | 制造商:Advanced Micro Devices 功能描述: |
| AM29C116-1JC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。