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您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄223346 > AM29DL320GB120WDI (ADVANCED MICRO DEVICES INC) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory PDF資料下載

參數(shù)資料

型號：	AM29DL320GB120WDI
廠商：	ADVANCED MICRO DEVICES INC
元件分類：	PROM
英文描述：	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述：	2M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝：	8 X 14 MM, 0.80 MM PITCH, FBGA-63
文件頁數(shù)：	23/55頁
文件大?。?/td>	1230K
代理商：	AM29DL320GB120WDI

July 31, 2002

Am29DL320G

3

ADV ANC E

INFO RMAT ION

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5

Special Package Handling Instructions .......................................... 6

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9

Table 1. Device Bus Operations .............................................................9

Word/Byte Configuration ................................................................ 9

Requirements for Reading Array Data ........................................... 9

Writing Commands/Command Sequences .................................. 10

Accelerated Program Operation ...................................................10

Autoselect Functions .................................................................... 10

Simultaneous Read/Write Operations

with Zero Latency ......................................................................... 10

Standby Mode .............................................................................. 10

Automatic Sleep Mode ................................................................. 10

RESET#: Hardware Reset Pin .....................................................11

Output Disable Mode ................................................................... 11

Table 2. Top Boot Sector Addresses ...................................................12

Table 3. Top Boot SecSiTM Sector Addresses ..................................... 13

Table 4. Bottom Boot Sector Addresses ...............................................14

Table 5. Bottom Boot SecSiTM Sector Addresses ................................ 15

Autoselect Mode .......................................................................... 16

Table 6. Autoselect Codes, (High Voltage Method) .............................16

Sector/Sector Block Protection and Unprotection ........................ 17

Table 7. Top Boot Sector/Sector Block Addresses

for Protection/Unprotection ...................................................................17

Table 8. Bottom Boot Sector/Sector Block Addresses

for Protection/Unprotection ...................................................................17

Write Protect (WP#) ..................................................................... 18

Temporary Sector Unprotect ........................................................ 18

Figure 1. Temporary Sector Unprotect Operation................................. 18

Figure 2. In-System Sector Protection/

Sector Unprotection Algorithms ............................................................ 19

SecSiTM (Secured Silicon) Sector

Flash Memory Region .................................................................. 20

Factory Locked: SecSi Sector Programmed and Protected At the

Factory ......................................................................................... 20

Customer Lockable: SecSi Sector NOT Programmed or Protected At

the Factory ...................................................................................20

Hardware Data Protection ............................................................ 20

Low VCC Write Inhibit .................................................................. 21

Write Pulse “Glitch” Protection .....................................................21

Logical Inhibit ...............................................................................21

Power-Up Write Inhibit ................................................................. 21

Common Flash Memory Interface (CFI) . . . . . . . 21

Table 9. CFI Query Identification String ................................................ 21

Table 10. System Interface String......................................................... 22

Table 11. Device Geometry Definition .................................................. 22

Table 12. Primary Vendor-Specific Extended Query ............................ 23

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 23

Reading Array Data ...................................................................... 23

Reset Command .......................................................................... 24

Autoselect Command Sequence ..................................................24

Enter SecSiTM Sector/Exit SecSi Sector

Command Sequence ................................................................... 24

Byte/Word Program Command Sequence ................................... 24

Unlock Bypass Command Sequence ........................................... 25

Figure 3. Program Operation ................................................................ 25

Chip Erase Command Sequence ................................................. 25

Sector Erase Command Sequence .............................................. 26

Erase Suspend/Erase Resume Commands ................................ 26

Figure 4. Erase Operation .................................................................... 27

Table 13. Command Definitions ........................................................... 28

Write Operation Status . . . . . . . . . . . . . . . . . . . . 29

DQ7: Data# Polling ...................................................................... 29

Figure 5. Data# Polling Algorithm ......................................................... 29

RY/BY#: Ready/Busy# ................................................................. 30

DQ6: Toggle Bit I .......................................................................... 30

Figure 6. Toggle Bit Algorithm .............................................................. 30

DQ2: Toggle Bit II ......................................................................... 31

Reading Toggle Bits DQ6/DQ2 .................................................... 31

DQ5: Exceeded Timing Limits ...................................................... 31

DQ3: Sector Erase Timer ............................................................. 31

Table 14. Write Operation Status ......................................................... 32

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 33

Figure 7. Maximum Negative Overshoot Waveform ............................. 33

Figure 8. Maximum Positive Overshoot Waveform .............................. 33

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 34

CC1 Current vs. Time (Showing Active and

Automatic Sleep Currents).................................................................... 35

Figure 10. Typical I

CC1 vs. Frequency................................................... 35

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 11. Test Setup .......................................................................... 36

Figure 12. Input Waveforms and Measurement Levels ........................ 36

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 13. Read Operation Timings...................................................... 37

Figure 14. Reset Timings...................................................................... 38

Word/Byte Configuration (BYTE#) ............................................... 39

Figure 15. BYTE# Timings for Read Operations .................................. 39

Figure 16. BYTE# Timings for Write Operations .................................. 39

Erase and Program Operations ................................................... 40

Figure 17. Program Operation Timings ................................................ 41

Figure 18. Accelerated Program Timing Diagram ................................ 41

Figure 19. Chip/Sector Erase Operation Timings ................................. 42

Figure 20. Back-to-back Read/Write Cycle Timings ............................. 43

Figure 21. Data# Polling Timings (During Embedded Algorithms) ....... 43

Figure 22. Toggle Bit Timings (During Embedded Algorithms) ............ 44

Figure 23. DQ2 vs. DQ6 ....................................................................... 44

Temporary Sector Unprotect ........................................................ 45

Figure 24. Temporary Sector Unprotect Timing Diagram ..................... 45

Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram 46

Alternate CE# Controlled Erase and Program Operations ........... 47

Figure 26. Alternate CE# Controlled Write (Erase/Program)

Operation Timings ................................................................................ 48

Erase And Programming Performance . . . . . . . 49

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 49

TSOP And SO Pin Capacitance . . . . . . . . . . . . . . 49

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 50

FBD063—63-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 14 mm . 50

FBD048—Fine-Pitch Ball Grid Array, 6 x 12 mm ......................... 51

TS 048—Thin Small Outline Package .......................................... 52

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 54

Revision A (December 6, 2001) ................................................... 54

相關(guān)PDF資料	PDF描述
AM29DL320GB120WDIN	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GB120WMI	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GB90WMIN	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EI	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EIN	32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
AM29DL320GB70EI	制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 70ns 48-Pin TSOP
AM29DL322DB7REIT	制造商:AMD 功能描述:New
AM29DL322DB-90WDIT	制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 63FBGA - Tape and Reel
AM29DL322DT-90EI-T	制造商:Advanced Micro Devices 功能描述:
AM29DL322GB-90EI	制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 90 ns, 48 Pin Plastic SMT

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