參數(shù)資料
型號(hào): AM29DL320GB120WDI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝: 8 X 14 MM, 0.80 MM PITCH, FBGA-63
文件頁(yè)數(shù): 42/55頁(yè)
文件大?。?/td> 1230K
代理商: AM29DL320GB120WDI
July 31, 2002
Am29DL320G
47
ADV ANC E
INFO RMAT ION
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
70
90
120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
354550
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
30
35
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
Byte
Typ
5
s
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
相關(guān)PDF資料
PDF描述
AM29DL320GB120WDIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GB120WMI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GB90WMIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL320GT120EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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