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參數(shù)資料
| 型號： | Am29DL800BT120EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只，同時作業(yè)快閃記憶體 |
| 文件頁數(shù)： | 38/43頁 |
| 文件大小： | 580K |
| 代理商： | AM29DL800BT120EEB |
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Am29DL800B
P R E L I M I N A R Y
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device,
D
OUT
= data written to the device.
3. Waveforms are for the word mode.
21519A-29
Figure 25.
Alternate CE# Controlled Erase/Program Operation Timings
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