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參數(shù)資料
| 型號： | AM29DS323DB120EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 46/54頁 |
| 文件大?。?/td> | 1013K |
| 代理商： | AM29DS323DB120EI |
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Am29DS323D
49
P R E L I M I NARY
AC CHARACTERISTICS
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 26.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DS323DB120EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DT110WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DT120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
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