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| 型號： | AM29DS323DB120EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 50/54頁 |
| 文件大小： | 1013K |
| 代理商： | AM29DS323DB120EI |
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Am29DS323D
53
P R E L I M I NARY
REVISION SUMMARY
Revision A (December 1, 1999)
Released page 1 only.
Publication Number 23480, Revision A
(January 25, 2000)
Released as full data sheet. The publication number
has been changed from 22394 to 23480.
Revision A+1 (June 16, 2000)
Global
The 100 ns speed option has been replaced by a 110
ns option.
The data sheet status has changed from “Advance In-
formation” to “Preliminary.”
Ordering Information
In the ordering part number, changed FBGA package
code to WM. For 6 x 12 FBGA packages only, the
physical marking for regulated voltage range devices
is now “Q” and the physical marking for full voltage
range devices is now “U.”
Ordering Information
Optional processing: Deleted the burn-in option.
DC Characteristics table
CMOS Compatible: Changed maximum specification
on V
LKO to 1.6 V.
AC Characteristics—Read-Only Operations
Changed t
DF to 16 ns from 30 ns.
AC Characteristics—Data Polling and Toggle Bit
Added table. Timing specifications for data polling and
toggle bit operations differ from those for memory
array read operations.
AC Characteristics—Erase and Program
Operations table; Alternate CE# Controlled Erase
and Program Operations table
Changed typical and maximum byte and word pro-
gramming times to match changes in erase and
program performance table.
Erase and Program Performance
Changed the following specifications: typical and max-
imum byte program time, typical and maximum word
program time, typical and maximum chip program time
for both word and byte modes.
Revision A+2 (November 1, 2000)
Global
Deleted “contact AMD for availability” notes for TSOP
package. Added TSOP valid combinations to the Or-
changed data for SecSi Sector Factory Protect to 85h
(factory locked) and 05h (not factory locked).
Revision A+3 (November 22, 2000)
Removed Preliminary status from document.
Boot Devices: Added ESN addresses to tables.
and Protected at the Factory: Corrected ESN address
range.
Autoselect Command Sequence: Added table to clar-
ify explanation of autoselect codes.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DS323DB120EIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMI | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DB120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DT110WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| AM29DS323DT120WMIN | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DS323DT-110WMI | 制造商:Spansion 功能描述:NOR Flash Parallel 32Mbit 4M/2M x 8bit/16bit 110ns 48-Pin FBGA |
| AM29DS323DT11WMINS | 制造商:Advanced Micro Devices 功能描述: |
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BB-120EC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, TSOP32, COM - Trays |
| AM29F002BB-120JCT | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM, T&R - Tape and Reel |
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