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參數(shù)資料
| 型號(hào)： | Am29F010-45EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門(mén)快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | AM29F010-45EEB |
SUPPLEMENT
1/13/98
Publication#
21116
Issue Date:
January 1998
Rev:
B
Amendment/
0
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 5.0 V
±
10% for read, erase, and program
operations
— Simplifies system-level power requirements
I
High performance
— 90 or 120 ns maximum access time
I
Low power consumption
— 30 mA max active read current
— 50 mA max program/erase current
— <25
μ
A typical standby current
I
Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
I
Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
I
Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
I
Minimum 100,000 program/erase cycles
guaranteed
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
I
Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
I
Tested to datasheet specifications at
temperature
I
Quality and reliability levels equivalent to
standard packaged components
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F010-55EEB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F010-45EIB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-55EIB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F010-45FCB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-55FCB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010-45JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 1Mbit 128K x 8bit 45ns 32-Pin PLCC |
| AM29F010-55PC5 | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, DIP |
| AM29F010-90DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F01090EC | 制造商:AMD 功能描述:* |
| AM29F010-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, TSSOP |
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