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參數(shù)資料
| 型號： | Am29F010-45EEB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 56K |
| 代理商： | AM29F010-45EEB |
1/13/98
Am29F010 Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 174 mils x 189 mils
4.42 mm x 4.80 mm
Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm
Bond Pad Size . . . . . . . . . . . . . . 4.47 mils x 4.47 mils
113.48
μ
m x 113.48
μ
m
Pad Area Free of Passivation . . . . . . . . . .19.98 mils
2
12,878
μ
m
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Si/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
For Read-only . . . . . . . . . . .T
J
(max) = 140
°
C
Operating Temperature . . . Commercial 0
°
C to +70
°
C
Industrial –40
°
C to +85
°
C
Extended –55
°
C to +125
°
C
MANUFACTURING INFORMATION
Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX
Manufacturing ID. . . . . . . . . . . . . . . . . . . . . .98108AK
Preparation for Shipment . . . . . . . .Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
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PDF描述 |
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| Am29F010-55EEB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F010-45EIB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-55EIB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F010-45FCB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-55FCB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010-45JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash Parallel 5V 1Mbit 128K x 8bit 45ns 32-Pin PLCC |
| AM29F010-55PC5 | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, DIP |
| AM29F010-90DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F01090EC | 制造商:AMD 功能描述:* |
| AM29F010-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, TSSOP |
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