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參數(shù)資料
| 型號： | AM29F010 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 12/31頁 |
| 文件大?。?/td> | 370K |
| 代理商： | AM29F010 |
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Am29F010
written. If the time between additional sector erase
commands can be assumed to be less than 50
μ
s, the
system need not monitor DQ3.
Any command during
the time-out period resets the device to reading
array data.
The system must rewrite the command se-
quence and any additional sector addresses and com-
mands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the ris-
ing edge of the final WE# pulse in the command se-
quence.
Once the sector erase operation has begun, all other
commands are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7 or DQ6. Refer
to “Write Operation Status” for information on these
status bits.
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
16736G-8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F010-1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120DTC1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120DWE1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120EC | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-120ECB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010-120DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGE1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGI1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| AM29F010-120JC/T | 制造商:Advanced Micro Devices 功能描述:FLASH 128KX8,120NS,PLCC32,TAPE 制造商:Advanced Micro Devices 功能描述:128K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
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