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參數(shù)資料
| 型號： | AM29F010 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 1兆位（128畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 26/31頁 |
| 文件大小： | 370K |
| 代理商： | AM29F010 |
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26
Am29F010
AC CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for -45, -55 PDIP), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
for further information on command definitions.
6. The device has a typical erase and program cycle endurance of 1,000,000 cycles. 100,000 cycles are guaranteed.
t
GHEL
t
WS
OE#
CE#
WE#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
WHWH1 or 2
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, D
OUT
= Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
16736G-17
Figure 13.
Alternate CE# Controlled Write Operation Timings
Parameter
Limits
Comments
Typ (Note 1)
Max (Note 2)
Unit
Chip/Sector Erase Time
1.0
15
sec
Excludes 00h programming prior to
erasure (Note 4)
Byte Programming Time
14
1000
μ
s
Excludes system-level overhead
(Note 5)
Chip Programming Time (Note 3)
1.8
12.5
sec
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F010-1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120DTC1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120DWE1 | 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 |
| AM29F010-120EC | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F010-120ECB | 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F010-120DGC1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGE1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (EXTEND TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120DGI1 | 制造商:Spansion 功能描述:1M FLASH KNOWN GOOD DIE (INDUSTRIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F010-120JC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC 制造商:Analog Devices 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, PLCC |
| AM29F010-120JC/T | 制造商:Advanced Micro Devices 功能描述:FLASH 128KX8,120NS,PLCC32,TAPE 制造商:Advanced Micro Devices 功能描述:128K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
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