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| 型號(hào)： | Am29F016D-120ECB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 16兆位（2米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁(yè)數(shù)： | 2/45頁(yè) |
| 文件大?。?/td> | 1145K |
| 代理商： | AM29F016D-120ECB |
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This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21444
Issue Date:
March 23, 2001
Rev:
E
Amendment/
+2
Am29F016D
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
I
5.0 V
±
10%, single power supply operation
— Minimizes system level power requirements
I
Manufactured on 0.23
μm process technology
— Compatible with 0.5 μm Am29F016 and 0.32 μm
Am29F016B devices
I
High performance
— Access times as fast as 70 ns
I
Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 μA typical standby current (standard access
time to active mode)
I
Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
I
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
I
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
I
Minimum 1,000,000 program/erase cycles per
sector guaranteed
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
I
Package options
— 48-pin and 40-pin TSOP
— 44-pin SO
— Known Good Die (KGD)
(see publication number 21551)
I
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply Flash standard
— Superior inadvertent write protection
I
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase cycle completion
I
Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
I
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
I
Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016D-150E4I | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F016D-150EC | LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box |
| Am29F016D-150ECB | LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box |
| AM29F016D-150EE | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
| Am29F016D-150EEB | LM3370 Dual Synchronous Step-Down DC-DC Converter with Dynamic Voltage Scaling Function; Package: LLP; No of Pins: 16; Qty per Container: 1000; Container: Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016D-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns 48-Pin TSOP |
| AM29F016D120FI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 120ns 48-Pin RTSOP |
| am29f016d-150e4c | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Advanced Micro Devices 功能描述: 制造商:AMD 功能描述: |
| AM29F016D-150EC | 制造商:Spansion 功能描述:16M (2MX8) 5V, UNIFORM SECTOR, TSOP48, COM - Trays |
| AM29F016D-70E4D | 制造商:SOCO 功能描述: |
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