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參數(shù)資料
| 型號(hào)： | AM29F040B-1 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁(yè)數(shù)： | 13/33頁(yè) |
| 文件大?。?/td> | 446K |
| 代理商： | AM29F040B-1 |
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Am29F040
13
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up
and power-down, the Am29F040 locks out write cycles
for V
CC
< V
LKO
(see DC Characteristics section for
voltages). When V
CC
< V
LKO
, the command register is
disabled, all internal program/erase circuits are
disabled, and the device resets to the read mode. The
Am29F040 ignores all writes until V
CC
> V
LKO
. The user
must ensure that the control pins are in the correct logic
state when V
CC
> V
LKO
to prevent unintentional writes.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE or
WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
,
CE = V
IH
or WE = V
IH
. To initiate a write cycle CE and
WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = V
IL
and
OE = V
IH
will not accept commands on the rising edge
of WE. The internal state machine is automatically
reset to the read mode on power-up.
Sector Protect
Sectors of the Am29F040 may be hardware protected
using programming equipment at the users factory. The
protection circuitry will disable both program and erase
functions for the protected sector(s). Requests to pro-
gram or erase a protected sector will be ignored by the
device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040-55JEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-150EIB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120EEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120EIB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120EE | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B120EC | 制造商:AMD 功能描述:* |
| AM29F040B-120EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP 制造商:SILICON 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-120ED | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-120EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP |
| AM29F040B120JC | 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: |
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