參數(shù)資料
型號(hào): AM29F040B-1
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 4兆位(512畝× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 17/33頁
文件大?。?/td> 446K
代理商: AM29F040B-1
Am29F040
17
Note:
DQ6 is rechecked even if DQ5 = “1” because DQ6 may stop toggling at the same time as DQ5 changing to “1”.
Figure 5.
Toggle Bit Algorithm
Figure 6.
Maximum Negative Overshoot Waveform
Figure 7.
Maximum Positive Overshoot Waveform
Start
Fail
Yes
DQ6 = Data
Yes
Pass
No
No
Yes
DQ6 = Data
DQ5 = 1
No
Read Byte
(DQ0–DQ7)
Addr = VA
Read Byte
(DQ0–DQ7)
Addr = VA
VA=Byte address for programming
=Any of the sector addresses within the
sector being erased during sector erase
operation
=XXXXH during chip erase
17113E-10
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
17113E-11
20 ns
V
CC
+ 0.5 V
2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
17113E-12
相關(guān)PDF資料
PDF描述
AM29F040-55JEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-150EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EEB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EIB 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F040-120EE 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F040B120EC 制造商:AMD 功能描述:*
AM29F040B-120EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP 制造商:SILICON 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP
AM29F040B-120ED 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP
AM29F040B-120EE 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 120ns 32-Pin TSOP
AM29F040B120JC 制造商:AMD 功能描述:* 制造商:Advanced Micro Devices 功能描述: