參數(shù)資料
型號(hào)： Am29F040B-70JI
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 4兆位（512畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門(mén)快閃記憶體
文件頁(yè)數(shù)： 18/30頁(yè)
文件大?。?/td> 403K
代理商： AM29F040B-70JI
Am29F040B
25
P R E L I M I NARY
AC CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 5.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -55), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
8
64
sec
Byte Programming Time
7
300
s
Excludes system-level overhead
Chip Programming Time (Note 3)
3.6
10.8
sec
tGHEL
tWS
OE#
CE#
WE#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
21445B-19
Figure 14.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
Am29F040B-70PCB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70PC 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70PEB 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Am29F040B-70PE 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM30LV0064DJ40E2C 8M X 8 FLASH 3V PROM, 35 ns, PDSO40
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F040B-70JI\\T 制造商:Spansion 功能描述:IC, FLASH MEM, 4MBIT, 70NS, 32-PLCC, Memory Type:Flash - NOR, Memory Size:4Mbit,
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