- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295065 > Am29F040B-70JI (Advanced Micro Devices, Inc.) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | Am29F040B-70JI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 4兆位（512畝× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 30/30頁 |
| 文件大?。?/td> | 403K |
| 代理商： | AM29F040B-70JI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當(dāng)前第30頁
Am29F040B
9
P R E L I M I NARY
data with the same exception. See “Erase Suspend/
Erase Resume Commands” for more information on
this mode.
The system
must issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Com-
mand” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM program-
mers and requires VID on address bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h or retrieves the manu-
facturer code. A read cycle at address XX01h returns
the device code. A read cycle containing a sector ad-
dress (SA) and the address 02h in returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
the Sector Address tables for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two un-
lock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is
not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the pro-
grammed cell margin. The Command Definitions take
shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using DQ7
or DQ6. See “Write Operation Status” for information
on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F040B-70PCB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PC | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PEB | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| Am29F040B-70PE | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM30LV0064DJ40E2C | 8M X 8 FLASH 3V PROM, 35 ns, PDSO40 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-70JI\\T | 制造商:Spansion 功能描述:IC, FLASH MEM, 4MBIT, 70NS, 32-PLCC, Memory Type:Flash - NOR, Memory Size:4Mbit, |
| AM29F040B-70JI\T | 功能描述:閃存 4M (512Kx8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F040B-70JK | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 70ns 32-Pin PLCC |
| AM29F040B-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 8, 32 Pin, Plastic, TSSOP |
| AM29F040B-90ED | 制造商:Spansion 功能描述:Bulk 制造商:Spansion 功能描述:IC FLASH 4MB SMD 29F040 TSOP32 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。