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| 型號： | AM29F040B-90PK |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 90 ns, PDIP32 |
| 封裝： | LEAD FREE, PLASTIC, MO-015AP, DIP-32 |
| 文件頁數(shù)： | 35/36頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29F040B-90PK |
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November1,2006 21445E5
Am29F040B
33
D A T A S H E E T
REVISION SUMMARY
Revision A (May 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision B+1 (January 1998)
AC Characteristics, Erase and Program Operations
Added Note references to t
WHWH1
. Corrected the pa-
rameter symbol for V
CC
Set-up Time to t
VCS
; the
specification is 50 μs minimum. Deleted the last row in
table.
Revision B+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability to the -55 and
-70 speed options.
AC Characteristics
Erase and Program Operations; Erase and Program
Operations Alternate CE# Controlled Writes:
Corrected
the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the note
reference for t
VCS
. This parameter is not 100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added 20-year data retention bullet.
DC Characteristics—TTL/NMOS Compatible
V
OH
: Changed the parameter description to “Output
High Voltage” from Output High Level”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifi-
cations are tested with V
CC
= V
CCmax
”.
I
CC3
: Deleted V
CC
= V
CC
Max.
Revision C+1 (February 1999)
Command Definitions
Command Definitions table:
Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Revision C+2 (May 17, 1999)
Test Specifications Table
Corrected the input and output measurement entries in
the “All others” column.
Revision D (November 15, 1999)
AC Characteristics—Figure 9. Program Operations
Timing and Figure 10. Chip/Sector Erase
Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E0 (November 29, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
Revision E1 (October 4, 2004)
Added PB-Free option to Standard Ordering Matrix.
Updated Valid Combinations
Revision E2 (July 18, 2005)
Ordering Information
In valid combinations list, added the following: Pb-free
options JD, JF, JK to set of -55 and -70 speed options;
Pb-free options PD, PF, PK, JD, JF, JK to the set of -90,
-120, and -150 speed options.
Revision E3 (January 31, 2006)
Global
Removed 150 speed option from document.
Removed 32-pin Reverse TSOP diagrams and all ref-
erences from Ordering Information.
Revision E4 (May 18, 2006)
Added migration and obsolescence information.
Revision E5 (November 1, 2006)
Deleted migration and obsolescence text.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040 | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040B-1 | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040-55JEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-150EIB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-120EEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F080B-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F080B-120EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 120ns 40-Pin TSOP |
| AM29F080B-120SC | 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,SOP,44PIN,PLASTIC |
| AM29F080B-120SC/T | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 8MBIT 1MX8 120NS 44SOIC - Rail/Tube |
| AM29F080B-55EF | 功能描述:閃存 8M (1MX8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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