參數(shù)資料
型號(hào): AM29F080B-70ED
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁(yè)數(shù): 25/39頁(yè)
文件大小: 517K
代理商: AM29F080B-70ED
November1,2006 21503G5
Am29F080B
23
D AT A S H E E T
TEST CONDITIONS
Table 2.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
Ω
C
L
6.2 k
Ω
5.0 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 8.
Test Setup
Test Condition
-55
All
others
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Pulse Levels
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
相關(guān)PDF資料
PDF描述
AM29F080B-70EE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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