參數(shù)資料
型號： AM29F080B-70ED
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 8兆位（1米× 8位）的CMOS 5.0伏只，統(tǒng)一部門快閃記憶體
文件頁數(shù)： 5/39頁
文件大?。?/td> 517K
代理商： AM29F080B-70ED
November1,2006 21503G5
Am29F080B
3
D AT A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .8
Table 1. Am29F080B Device Bus Operations ..................................8
Requirements for Reading Array Data .....................................8
Writing Commands/Command Sequences ..............................8
Program and Erase Operation Status ......................................8
Standby Mode ..........................................................................9
RESET#: Hardware Reset Pin .................................................9
Output Disable Mode ................................................................9
Table 1. Am29F080B Sector Address Table ...................................10
Autoselect Mode .....................................................................10
Table 2. Am29F080B Autoselect Codes (High Voltage Method) ....10
Sector Group Protection/Unprotection ....................................11
Table 3. Sector Group Addresses ...................................................11
Temporary Sector Group Unprotect .......................................11
Figure 1. Temporary Sector Group Unprotect Operation ................11
Hardware Data Protection ......................................................12
Low V
CC
Write Inhibit ......................................................................12
Write Pulse “Glitch” Protection ........................................................12
Logical Inhibit ..................................................................................12
Power-Up Write Inhibit ....................................................................12
Command Definitions . . . . . . . . . . . . . . . . . . . . . .12
Reading Array Data ................................................................12
Reset Command .....................................................................12
Autoselect Command Sequence ............................................12
Byte Program Command Sequence .......................................13
Figure 2. Program Operation ..........................................................13
Chip Erase Command Sequence ...........................................13
Sector Erase Command Sequence ........................................14
Erase Suspend/Erase Resume Commands ...........................14
Figure 3. Erase Operation ...............................................................15
Command Definitions .............................................................16
Table 4. Am29F080B Command Definitions ..................................16
Write Operation Status . . . . . . . . . . . . . . . . . . . . .17
DQ7: Data# Polling .................................................................17
Figure 4. Data# Polling Algorithm ...................................................17
RY/BY#: Ready/Busy# ...........................................................18
DQ6: Toggle Bit I ....................................................................18
DQ2: Toggle Bit II ...................................................................18
Reading Toggle Bits DQ6/DQ2 ..............................................18
DQ5: Exceeded Timing Limits ................................................19
DQ3: Sector Erase Timer .......................................................19
Figure 5. Toggle Bit Algorithm .........................................................19
Table 5. Write Operation Status ......................................................20
Absolute Maximum Ratings . . . . . . . . . . . . . . . . .21
Figure 6. Maximum Negative OvershootWaveform ......................21
Figure 7. Maximum Negative OvershootWaveform ......................21
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 21
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 22
TTL/NMOS Compatible ..........................................................22
CMOS Compatible ..................................................................22
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 8. Test Setup .......................................................................23
Table 2. Test Specifications ...........................................................23
Key to Switching Waveforms . . . . . . . . . . . . . . . 23
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 24
Read-only Operations .............................................................24
Figure 9. Read Operation Timings .................................................24
Hardware Reset (RESET#) ....................................................25
Figure 10. RESET# Timings ..........................................................25
Erase and Program Operations ..............................................26
Figure 11. Program Operation Timings ..........................................27
Figure 12. Chip/Sector Erase Operation Timings ..........................28
Figure 13. Data# Polling Timings (During Embedded Algorithms) .29
Figure 14. Toggle Bit Timings (During Embedded Algorithms) ......29
Figure 15. DQ2 vs. DQ6 .................................................................30
Temporary Sector Unprotect ..................................................30
Figure 16. Temporary Sector Group Unprotect Timing Diagram ...30
Erase and Program Operations ..............................................31
Alternate CE# Controlled Writes ....................................................31
Figure 17. Alternate CE# Controlled Write Operation Timings ......32
Erase and Programming Performance . . . . . . 33
Latchup Characteristic . . . . . . . . . . . . . . . . . . . . 33
TSOP and SO Pin Capacitance . . . . . . . . . . . . . 33
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 34
SO 044—44-Pin Small Outline Package ................................34
TS 040—40-Pin Standard Thin Small Outline Package .........35
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 36
Revision A (July 1997) ............................................................36
Revision B (January 1998) .....................................................36
Revision C (January 1998) .....................................................36
Revision D (May 1998) ...........................................................36
Revision E (January 1999) .....................................................36
Revision E+1 (March 23, 1999) ..............................................36
Revision E+2 (April 9, 1999) ...................................................36
Revision F (November 15, 1999) ............................................36
Revision F+1 (May 18, 2000) .................................................36
Revision G (December 4, 2000) .............................................36
Revision G+1 (January 3, 2002) .............................................37
Revision G+2 (June 14, 2004) ................................................37
Revision G3 (December 22, 2005) .........................................37
Revision G4 (May 19, 2006) ...................................................37
Revision G5 (November 1, 2006) ...........................................37
相關PDF資料
PDF描述
AM29F080B-70EE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29F080B-70EF 功能描述:閃存 8M (1MX8) 70ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F080B-70SF 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M x 8bit 70ns 44-Pin SO
AM29F080B-75EF 制造商:Spansion 功能描述:8 MEGABIT 1 M X 8-BIT CMOS 5.0 VOLT-ONLY, UNIFORM SECTOR FLASH MEMORY
AM29F080B-75EI 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,1MX8,CMOS,TSSOP,40PIN,PLASTIC
AM29F080B-90EC 制造商:Advanced Micro Devices 功能描述: 制造商:Spansion 功能描述:IC, FLASH MEM, 8MBIT, 90NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:8Mbit,
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