參數資料
型號: AM29F080B-70EE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數: 11/39頁
文件大小: 517K
代理商: AM29F080B-70EE
November1,2006 21503G5
Am29F080B
9
D AT A S H E E T
Status” for more information, and to each AC Charac-
teristics section in the appropriate data sheet for timing
diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when CE#
and RESET# pins are both held at V
CC
±
0.5 V. (Note
that this is a more restricted voltage range than V
IH
.)
The device enters the TTL standby mode when CE#
and RESET# pins are both held at V
IH
. The device re-
quires standard access time (t
CE
) for read access when
the device is in either of these standby modes, before it
is ready to read data.
The device also enters the standby mode when the RE-
SET# pin is driven low. Refer to the next section, “RE-
SET#: Hardware Reset Pin”.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the DC Characteristics tables, I
CC3
represents the
standby current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the system
drives the RESET# pin low for at least a period of t
RP
,
the device
immediately terminates
any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
IL
, the device enters
the TTL standby mode; if RESET# is held at V
SS
±
0.5 V, the device enters the CMOS standby mode.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
ternal reset operation is complete, which requires a
time of t
READY
(during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of t
READY
(not during Embedded Algo-
rithms). The system can read data t
RH
after the RE-
SET# pin returns to V
IH
.
Refer to the AC Characteristics tables for RESET# pa-
rameters and timing diagram.
Output Disable Mode
When the OE# input is at V
IH
, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
相關PDF資料
PDF描述
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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