參數(shù)資料
型號: AM29F080B-70EE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 24/39頁
文件大小: 517K
代理商: AM29F080B-70EE
22
Am29F080B
21503G5 November1,2006
D AT A S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
CMOS Compatible
Notes for DC Characteristics (both tables):
1. The I
CC
current listed includes is typically less than 1 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Program or Embedded Erase algorithm is in progress.
4. Not 100% tested.
5. For CMOS mode only, I
CC3
= I
CC4
= 20 μA max at extended temperatures (> +85°C).
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL
,
OE# = V
IH
CE#
=
V
IL
,
OE#
=
V
IH
μA
A9 Input Load Current
50
±
1.0
μA
Output Leakage Current
μA
V
CC
Read Current (Notes 1, 2)
V
CC
Write Current (Notes 2, 3, 4)
V
CC
Standby Current
(CE# Controlled) (Notes 2, 5)
25
40
mA
30
40
mA
I
CC3
CE# = V
IH
, RESET#
=
V
IH
0.4
1.0
mA
I
CC4
V
CC
Standby Current
(RESET# Controlled) (Notes 2, 5)
RESET# = V
IL
0.4
1.0
mA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
2.0
V
CC
+ 0.5
V
V
ID
Voltage for Autoselect and Sector
Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA V
CC
= V
CC
Min
0.45
V
Output High Level
2.4
V
Low V
CC
Lock-out Voltage
3.2
4.2
V
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
±
1.0
Unit
I
LI
I
LIT
I
LO
I
CC1
I
CC2
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
V
CC
= V
CC
Max, A9 = 12.5 V
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
CE# = V
IL,
OE# = V
IH
CE#
= V
IL,
OE#
= V
IH
CE#
=
V
CC
±
0.5 V,
RESET#
=
V
CC
±
0.5 V
μA
A9 Input Load Current
50
±
1.0
μA
Output Leakage Current
μA
V
CC
Read Current (Notes 1, 2)
V
CC
Write Current (Notes 2, 3, 4)
V
CC
Standby Current (CE#
Controlled) (Notes 2, 5)
25
40
mA
30
40
mA
I
CC3
1
5
μA
I
CC4
V
CC
Standby Current (RESET#
Controlled) (Notes 2, 5)
RESET# = V
SS
±
0.5 V
1
5
μA
V
IL
V
IH
Input Low Level
–0.5
0.8
V
Input High Level
0.7x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect
and Sector Protect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
V
OH1
V
OH2
V
LKO
Output Low Voltage
I
OL
= 12 mA, V
CC
= V
CC
Min
I
OH
= –2.5 mA, V
CC
= V
CC
Min
I
OH
= –100 μA, V
CC
= V
CC
Min
0.45
V
Output High Voltage
0.85 V
CC
V
CC
– 0.4
3.2
V
V
Low V
CC
Lock-out Voltage
4.2
V
相關(guān)PDF資料
PDF描述
AM29F080B-70EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SE 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-70SF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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