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參數(shù)資料
| 型號： | Am29F200BB-120DP1 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| 中文描述： | 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，扇區(qū)閃存模修訂1 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 444K |
| 代理商： | AM29F200BB-120DP1 |
SUPPLEMENT
Publication#
21257
Issue Date:
June 27, 2001
Rev:
D
Amendment/
+4
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
■
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29F200A device
■
High performance
— 70, 90, or 120 ns access time
■
Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 μA typical standby current
■
Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Top or bottom boot block configurations
available
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 write/erase cycles
guaranteed
■
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■
Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■
Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
■
Hardware RESET# pin
— Resets internal state machine to the reading
array data
■
20-year data retention at 125
°
C
■
Tested to datasheet specifications at
temperature
— Contact AMD for higher temperature range
devices
■
Quality and reliability levels equivalent to
standard packaged components
■
Shipped in waffle pack, surftape, and unsawn
wafer
■
500 μm die/wafer thickness
相關PDF資料 |
PDF描述 |
|---|---|
| Am29F200BB-120DT1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200BB-45 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F400AT-120EIB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| Am29F400AT-65EIB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F400AT-70EC | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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