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參數(shù)資料
| 型號(hào)： | Am29F200BB-120DP1 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| 中文描述： | 2兆位（256畝x 8-Bit/128畝x 16位），5.0伏的CMOS只，扇區(qū)閃存模修訂1 |
| 文件頁(yè)數(shù)： | 9/11頁(yè) |
| 文件大?。?/td> | 444K |
| 代理商： | AM29F200BB-120DP1 |
8
Am29F200B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.43 mm x 3.81 mm
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 μm
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 μm x 115.9 μm
Pad Area Free of Passivation . . . . . . . . . .13.99 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 μm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Bond Pad Metalization. . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
V
CC
(Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias:
Commercial, Industrial, and
Extended Temperature Range. . . . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Contact AMD for higher temperature range devices.
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,
. . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . .98480AK
(Bottom Boot) . . . . . . . .98480ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F200BB-120DT1 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 |
| AM29F200BB-45 | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| Am29F400AT-120EIB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| Am29F400AT-65EIB | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F400AT-70EC | 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F200BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-120SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 120ns 44-Pin SOIC |
| AM29F200BB-120SI\T | 制造商:Spansion 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 120ns 44-Pin SOIC T/R |
| AM29F200BB-45SI | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-55EF | 功能描述:閃存 2M (256KX8/128KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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