參數(shù)資料
型號(hào): AM29F200T-120FEB
英文描述: A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP, 59 Amps
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 27/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F200T-120FEB
Am29F002B/Am29F002NB
27
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2.
See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-55
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min
25
30
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
45
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
7
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
相關(guān)PDF資料
PDF描述
AM29F200T-120FI x8/x16 Flash EEPROM
AM29F200T-120SC x8/x16 Flash EEPROM
AM29F200T-120SE 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2407 with Standard Packaging
AM29F200T-120SEB 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2407 with Lead Free Packaging
AM29F200T-120SI x8/x16 Flash EEPROM
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