參數(shù)資料
型號(hào): AM29F200T-120FEB
英文描述: A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP, 59 Amps
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 30/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F200T-120FEB
30
Am29F002B/Am29F002NB
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
Complement
True
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
ACC
t
RC
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 13.
Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
DQ6/DQ2
Addresses
VA
t
OEH
t
CE
t
CH
t
OH
t
DF
VA
VA
t
ACC
t
RC
Valid Data
Valid Status
(stops toggling)
Valid Status
(first read)
(second read)
Valid Status
VA
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 14.
Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料
PDF描述
AM29F200T-120FI x8/x16 Flash EEPROM
AM29F200T-120SC x8/x16 Flash EEPROM
AM29F200T-120SE 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2407 with Standard Packaging
AM29F200T-120SEB 75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2407 with Lead Free Packaging
AM29F200T-120SI x8/x16 Flash EEPROM
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