參數(shù)資料
型號(hào): AM29F200T-150FE
英文描述: x8/x16 Flash EEPROM
中文描述: x8/x16閃存EEPROM
文件頁(yè)數(shù): 20/39頁(yè)
文件大?。?/td> 728K
代理商: AM29F200T-150FE
20
Am29F002B/Am29F002NB
Table 6.
Write Operation Status
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
Operation
DQ7
(Note 1)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 2)
0
0
DQ3
N/A
1
DQ2
(Note 1)
No toggle
Toggle
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend-Program
Erase
Suspend
Mode
1
No toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
相關(guān)PDF資料
PDF描述
AM29F200T-150FEB 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3715ZCS with Lead Free Packaging
AM29F200T-150FI 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3705Z with Lead Free Packaging
AM29F200T-150SC x8/x16 Flash EEPROM
AM29F200T-150SE 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; Similar to IRFIZ46N with Lead Free Packaging
AM29F200T-150SEB 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR024N with Lead Free Packaging
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