參數(shù)資料
型號(hào): Am29F400AT-65EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述: 4兆位(524,288 x 8-Bit/262,144 x 16位),5.0伏的CMOS只,扇區(qū)擦除閃存
文件頁(yè)數(shù): 11/35頁(yè)
文件大小: 136K
代理商: AM29F400AT-65EIB
Am29F400AT/Am29F400AB
11
P R E L I M I N A R Y
5
It is possible to determine if a sector is protected in the
system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where
the higher order address bits A12–A17 is the desired
sector address, will produce a logical “1” at DQ0 for a
protected sector. See Table 3 for Autoselect codes.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors of the Am29F400A device in
order to change data in-system. The Sector Unprotect
mode is activated by setting the RESET pin to high volt-
age (12V). During this mode, formerly protected sec-
tors can be programmed or erased by selecting the
sector addresses. Once the 12 V is taken away from
the RESET pin, all the previously protected sectors will
be protected again. Refer to Figures 16 and 17.
Command Definitions
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values
or writing them in the improper sequence will reset
the device to the read mode
. Table 7 defines the valid
register command sequences. Note that the
Erase Suspend (B0H) and Erase Resume (30H) com-
mands are valid only while the Sector Erase operation
is in progress. Moreover, both Reset/Read commands
are functionally equivalent, resetting the device to the
read mode.
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AM29F400AT-70EC 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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