參數(shù)資料
型號(hào)： Am29F400AT-65EIB
廠商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
中文描述： 4兆位（524,288 x 8-Bit/262，144 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存
文件頁(yè)數(shù)： 12/35頁(yè)
文件大?。?/td> 136K
代理商： AM29F400AT-65EIB
12
Am29F400AT/Am29F400AB
P R E L I M I N A R Y
Table 7.
Am29F400A Command Definitions (Notes 1–7)
Notes:
1. Bus operations are defined in Tables 1 and 2.
2. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A17–A12 will uniquely select any sector.
3. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE
4. Reading from non-erasing sectors is allowed in the Erase Suspend mode.
5. Address bits A17–A15 are don’t care for unlock and command cycles.
6. The system should generate the following address patterns:
Word Mode: 5555H or 2AAAH to addresses A0–A14
Byte Mode: AAAAH or 5555H to addresses A-1–A14.
Read/Reset Command
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for
reads until the command register contents are altered.
The device will automatically power-up in the read/
reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value en-
sures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC
Read Characteristics and Waveforms for the specific
timing parameters.
Command
Sequence
Read/Reset
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
1
XXXXH F0H
Reset/
Read
Word
3
5555H
AAH 2AAAH 55H
5555H
F0H
RA
RD
Byte
AAAAH
5555H
AAAAH
Autoselect
Word
3
5555H
AAH 2AAAH 55H
5555H
90H
01H
2223H
(T Device ID)
22ABH
(B Device ID)
Byte
AAAAH
5555H
AAAAH
23H
(T Device ID)
ABH
(B Device ID)
Word
/Byte
00H
01H (T/B
Manuf. ID)
Program
Word
4
5555H
AAH 2AAAH 55H
5555H
A0H
PA
PD
Byte
AAAAH
5555H
AAAAH
Chip Erase
Word
6
5555H
AAH 2AAAH 55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Byte
AAAAH
5555H
AAAAH
AAAAH
5555H
AAAAH
Sector
Erase
Word
6
5555H
AAH 2AAAH 55H
5555H
80H
5555H
AAH
2AAAH
55H
SA
30H
Byte
AAAAH
5555H
AAAAH
AAAAH
5555H
Erase Suspend
1
XXXXH B0H
Erase Resume
1
XXXXH 30H
相關(guān)PDF資料
PDF描述
AM29F400AT-70EC 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AB-65FI 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F400AT 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AT-65FCB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Am29F400AT-65FIB 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
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AM29F400AT-90SC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 16, 44 Pin, Plastic, SOP
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