參數(shù)資料
型號： AM29F400BB-70SD
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Memory Size:4Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
中文描述： 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： LEAD FREE, MO-180AA, SOP-44
文件頁數(shù)： 25/43頁
文件大?。?/td> 865K
代理商： AM29F400BB-70SD
March 3, 2009 21505E6
Am29F400B
29
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-45
-50
-55
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
4550557090
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
4545454545
50
ns
tDVWH
tDS
Data Setup Time
Min
2525253045
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
35
45
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
Programming Operation
Byte
Typ
7
s
Word
Typ
12
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
1
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
30
35
50
ns
相關(guān)PDF資料
PDF描述
AM29F400BB-90EC Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Memory Size:4Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
AM29F400BB-90ED Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes
AM29F400BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F400BT-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29F400BT-70EC Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F400BB-70SD 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29F400BB-70SF 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F400BB-70SF\\T 制造商:Spansion 功能描述:
AM29F400BB-70SF\T 制造商:Spansion 功能描述:
AM29F400BB-90ED 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB SMD 29F400
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