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參數(shù)資料
| 型號： | AM29F400BB-70SD |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:4Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封裝： | LEAD FREE, MO-180AA, SOP-44 |
| 文件頁數(shù)： | 37/43頁 |
| 文件大小： | 865K |
| 代理商： | AM29F400BB-70SD |
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Am29F400B
21505E6 March 3, 2009
D A TA
SH EE T
General Description
Third paragraph: Added 45 ns to access times.
Product Selector Guide
Added the -45 speed option for VCC = 5.0 V ± 5% and
the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Added “Special Designation” to “Optional Processing”
heading; added “0” for 55 ns 10% VCC, deleted burn-in.
Burn-in is available by contacting an AMD representative.
Added -55 ± 10% and -45 speed options to the list of
valid combinations. Added extended temperature
ratings to -55 ±5% valid combinations.
Table 1, Device Bus Operations
Changed the BYTE#=VIL input for DQ8–DQ15 during
temporary sector unprotect to “don’t care” (X).
Figure 6. Maximum Negative Undershoot
Waveform
Corrected figure title.
Table 7, Test Specifications
Test load capacitance: Removed 55 ns speed option
from and added -45 speed option to the 30 pF.
DC Characteristics
Removed VCC = VCC max test condition for ICC1 – ICC3.
VCC max is only valid for max specs.
AC Characteristics
Added the -45 speed option.
Revision C+4 (August 1998)
Ordering Information
Added extended temperature combinations to the -55,
±10% speed option.
Deleted the -60 speed option.
Revision D (January 1999)
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
DC Characteristics—TTL/NMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
DC Characteristics—CMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
Erase and Programming Performance
Deleted “(4.75 V for -45 and -55xx0)” from Note 2.
Revision D+1 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 15, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 30, 2000)
Added table of contents. Reinserted revision summa-
ries for revisions A and B.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs
Revision E+3 (December 22, 2005)
Global
Deleted 150 ns speed option and reverse TSOP pack-
age from document.
Revision E4 (May 18, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 1, 2006)
Deleted “Not recommended for new designs” note and
Retired Product designation.
Revision E6 (March 3, 2009)
Global
Added obsolescence information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F400BB-90EC | Flash Memory IC; Access Time, Tacc:90ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Memory Size:4Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No |
| AM29F400BB-90ED | Flash Memory IC; Memory Size:4Mbit; Memory Configuration:256K x 16 / 512K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| AM29F400BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-55ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BT-70EC | Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 16 / 512K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400BB-70SD | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F400BB-70SF | 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F400BB-70SF\\T | 制造商:Spansion 功能描述: |
| AM29F400BB-70SF\T | 制造商:Spansion 功能描述: |
| AM29F400BB-90ED | 制造商:Spansion 功能描述:FLASH BOTTOM BLOCK 4MB SMD 29F400 |
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