參數(shù)資料
型號： Am29F800BB-120ECB
廠商： Advanced Micro Devices, Inc.
英文描述： Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），5.0伏的CMOS只，引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 15/39頁
文件大小： 518K
代理商： AM29F800BB-120ECB
22
Am29F800B
P R E L I M I NARY
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
±1.0
A
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
±1.0
A
ICC1
VCC Active Read Current
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 5 MHz, Byte Mode
19
40
mA
CE# = VIL, OE# = VIH, VCC = VCC max,
f = 5 MHz, Word Mode
19
50
mA
ICC2
VCC Active Write Current
(Notes 2 and 3)
CE# = VIL, OE# = VIH, VCC = VCC max
36
60
mA
ICC3
VCC Standby Current
CE#, OE#, and RESET# = VIH,
VCC = VCC max,
0.4
1
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
2.0
VCC
+ 0.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
0.45
V
VOH
Output High Voltage
IOH = –2.5 mA, VCC = VCC min
2.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V
相關(guān)PDF資料
PDF描述
AM29F800BB-120EC Flash Memory IC; Access Time, Tacc:120ns; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Supply Voltage Max:5.5V; Mounting Type:Surface Mount
AM29F800BB-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-120SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-70EC Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:512K x 16 / 1M x 8; Memory Size:8Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F800BB120SC 制造商:Advanced Micro Devices 功能描述:
AM29F800BB-55EC 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP
AM29F800BB-55EF 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F800BB-55EF\\T 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S)
AM29F800BB-55EF\T 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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