參數(shù)資料
型號(hào): AM29F800BT-90SD
廠商: SPANSION LLC
元件分類: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封裝: LEAD FREE, MO-180AA, SOP-44
文件頁(yè)數(shù): 25/45頁(yè)
文件大?。?/td> 1402K
代理商: AM29F800BT-90SD
March 3, 2009 21504E6
Am29F800B
29
D A TA SH EE T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
Description
-55
-70
-90
-120
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
20
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
55
70
90
120
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
tELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
tELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
tFHQV
BYTE#
Switching
from byte
to word
mode
Figure 11.
BYTE# Timings for Read Operations
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 12.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
tHOLD (tAH)
tSET
(tAS)
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