參數(shù)資料
型號(hào)： AM29F800BT-90SD
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
封裝： LEAD FREE, MO-180AA, SOP-44
文件頁(yè)數(shù)： 26/45頁(yè)
文件大小： 1402K
代理商： AM29F800BT-90SD
30
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Description
Speed Options
JEDEC
Std
-55
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
25
30
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
35
45
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
Programming Operation (Note 2)
Byte
Typ
7
s
Word
Typ
12
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
30
35
50
ns
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