參數(shù)資料
型號(hào)： AM29LV001BT-5JC
廠商： Advanced Micro Devices, Inc.
英文描述： 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 1兆位（128畝× 8位）的CMOS 3.0伏，只引導(dǎo)扇區(qū)閃存
文件頁數(shù)： 19/43頁
文件大?。?/td> 493K
代理商： AM29LV001BT-5JC
May 5, 2006 21557F4
Am29LV001B
17
D A T A S H E E T
Command Definitions
Table 5.
Am29LV001B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE# or CE#
pulse.
PD = Data to be programmed at location PA. Data is latched
on the rising edge of WE# or CE# pulse.
SA = Address of the sector to be erased or verified. Address
bits A16–A12 uniquely select any sector.
Notes:
1. See
Table 1 on page 7
for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Address bits A16–A11 are don’t care for unlock and
command cycles, unless SA or PA required.
5. No unlock or command cycles required when device is in
read mode.
6. The Reset command is required to return to the read
mode when the device is in the autoselect mode or if DQ5
goes high.
7. The fourth cycle of the autoselect command sequence is
a read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector. The complete bus address in the fourth
cycle is composed of the sector address (A16–A12),
A1 = 1, and A0 = 0.
9. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
10. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the Unlock
Bypass mode.
11. The system may read and program functions in non-
erasing sectors, or enter the autoselect mode, when in the
Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation.
12. The Erase Resume command is valid only during the
Erase Suspend mode.
13. See
“Erase and Programming Performance” on page 36
for more information.
Command Sequence
(Note 1)
Bus Cycles (Notes 2–4)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
Data
Data
Data
Addr
Data
Addr
Data
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
A
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID, Top Boot
Block
4
555
AA
2AA
55
555
90
X01
ED
Device ID, Bottom
Boot Block
6D
Sector Protect
Verify (Note 8)
4
555
AA
2AA
55
555
90
SA
X02
00
01
Byte Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
(Note 9)
2
XXX
A0
PA
PD
Unlock Bypass Reset
(Note 10)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 11)
1
XXX
B0
Erase Resume (Note 12)
1
XXX
30
相關(guān)PDF資料
PDF描述
AM29LV001BT-5JD 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-5JE 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-5JF 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-5JI 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV001BT-5JK 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV002BB-90EC 制造商:Advanced Micro Devices 功能描述:
AM29LV002BT-90EF 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP
AM29LV002BT-90EI\\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
AM29LV002BT-90EI\T 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel
AM29LV002T-120EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 2M-Bit 256K x 8 120ns 40-Pin TSOP
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*