參數(shù)資料
型號： AM29LV008BB-120ED
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Interface Type:Parallel; Memory Size:8Mbit; Memory Configuration:1M x 8; Supply Voltage:3V; Package/Case:40-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3.6V RoHS Compliant: Yes
中文描述： 1M X 8 FLASH 3V PROM, 120 ns, PDSO40
封裝： LEAD FREE, MO-142BCD, TSOP-40
文件頁數(shù)： 24/41頁
文件大?。?/td> 738K
代理商： AM29LV008BB-120ED
30
Am29LV008B
21524D7 February 24, 2009
D A TA SH EET
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Option
JEDEC
Std
Description
-70R
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
50
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Typ
9
s
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
相關(guān)PDF資料
PDF描述
AM29LV008BB-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV008BB-70REF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29LV008BB-90ED Flash Memory IC; Interface Type:Parallel; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:40-TSOP; Supply Voltage:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3.6V RoHS Compliant: Yes
AM29LV008BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV008BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV008BB-120ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29LV008BB-80EC 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B - Bulk
AM29LV008BB-90ED 制造商:Spansion 功能描述:Flash Memory IC
AM29LV008BT-120EC 制造商:ADV-MICRO-DEV 功能描述:
AM29LV008BT-80EC 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk
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