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參數(shù)資料
| 型號： | AM29LV008BB-120ED |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Flash Memory IC; Interface Type:Parallel; Memory Size:8Mbit; Memory Configuration:1M x 8; Supply Voltage:3V; Package/Case:40-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3.6V RoHS Compliant: Yes |
| 中文描述： | 1M X 8 FLASH 3V PROM, 120 ns, PDSO40 |
| 封裝： | LEAD FREE, MO-142BCD, TSOP-40 |
| 文件頁數(shù)： | 41/41頁 |
| 文件大?。?/td> | 738K |
| 代理商： | AM29LV008BB-120ED |
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February 24, 2009 21524D7
Am29LV008B
9
D A TA SH EE T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1.
Am29LV008B Device Bus Operations
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A19–A0.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert
valid addresses on the device address inputs produce
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
the DC Characteristics table represents the active
current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
An erase operation can erase one sector, multiple sec-
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Command Definitions”
section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Refer to the Autoselect Mode and Autose-
lect Co mmand Sequen ce sect ions fo r mor e
information.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The “AC
Operation
CE#
OE#
WE#
RESET#
Addresses (Note 1)
DQ0–DQ7
Read
L
H
AIN
DOUT
Write
L
H
L
H
AIN
DIN
Standby
VCC ±
0.3 V
XX
VCC ±
0.3 V
X
High-Z
Output Disable
L
H
X
High-Z
Reset
X
L
X
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address, A6 = L,
A1 = H, A0 = L
DIN, DOUT
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address, A6 = H,
A1 = H, A0 = L
DIN, DOUT
Temporary Sector Unprotect
X
VID
AIN
DIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV008BB-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BB-70REF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BB-90ED | Flash Memory IC; Interface Type:Parallel; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:40-TSOP; Supply Voltage:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3.6V RoHS Compliant: Yes |
| AM29LV008BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV008BT-120ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV008BB-80EC | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B - Bulk |
| AM29LV008BB-90ED | 制造商:Spansion 功能描述:Flash Memory IC |
| AM29LV008BT-120EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV008BT-80EC | 制造商:Spansion 功能描述:IC 8 MEG X 8, 3 V FLASH TOP B - Bulk |
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